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FDT457N Datasheet, ON Semiconductor

FDT457N Datasheet, ON Semiconductor

FDT457N

datasheet Download (Size : 198.81KB)

FDT457N Datasheet
1.0 · rating-1

FDT457N mosfet equivalent, n-channel mosfet.

FDT457N

datasheet Download (Size : 198.81KB)

FDT457N Datasheet
1.0 · rating-1

Features and benefits


* 5 A, 30 V RDS(on) = 0.06 W @ VGS = 10 V RDS(on) = 0.090 W @ VGS = 4.5 V
* High Density Cell Design for Extremely Low RDS(ON)
* High Power and Current Handli.

Application

such as notebook computer power management, battery powered circuits, and DC motor control. Features
* 5 A, 30 V RDS.

Description

These N−Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance, provide superior switc.

Image gallery

FDT457N Page 1 FDT457N Page 2 FDT457N Page 3

TAGS

FDT457N
N-Channel
MOSFET
ON Semiconductor

Manufacturer


ON Semiconductor (https://www.onsemi.com/)

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